Semiconductor Grade Graphite

Semiconductor Grade Graphite is an ultra-high-purity, engineered material specifically processed for advanced semiconductor manufacturing applications. Designed to meet the stringent demands of high-temperature thermal fields, it delivers exceptional resistance to chemical contamination, superior thermal stability, and precise dimensional accuracy. 

Ash content strictly maintained <5 PPM to prevent chemical contamination, verified by independent third-party ICP-MS batch testing.

Manufactured via advanced cold isostatic pressing (CIP) to achieve uniform density, isotropic properties, and the elimination of structural weak points.

Features a low coefficient of thermal expansion (CTE) to prevent stress cracking and deformation during rapid temperature cycles.

Maintains structural integrity and high mechanical strength at temperatures up to 2,000°C (and higher under specific inert conditions) in vacuum or inert gas atmospheres.

Custom-machined in-house to tight dimensional tolerances down to ±0.005 mm for seamless semiconductor reactor integration.

Custom CNC Machining: Multi-axis CNC capabilities to fabricate complex geometries based on customer designs.

Surface Treatment Options: Optional CVD SiC coating services available upon request to further enhance oxidation and chemical resistance in reactive environments.

Engineering Consultation: Technical support from material experts to assist with grade selection and thermal field optimization.

Consultation & Design Review: Our engineers review your CAD drawings (STEP, IGES, DXF) to optimize machinability and thermal field performance.

Cold Isostatic Pressing (CIP): Forming uniform blocks to eliminate inner stresses and ensure isotropic structural reliability.

High-Temperature Purification: Vacuum graphitization and thermal purification to drive down trace metal impurities below 5 PPM.

Multi-Axis CNC Machining: Precision shaping to achieve tight tolerances down to ±0.005 mm.

Optional CVD SiC Coating: Chemical vapor deposition for an impervious silicon carbide layer, enhancing oxidation and plasma resistance.

Cleanroom Cleaning & Packaging: Ultrasonic cleaning followed by double-vacuum anti-static sealing for contamination-free transit.

CZ Silicon Single Crystal Growth: High-purity crucibles, heaters, and shielding components designed to withstand intense thermal fields while preventing impurity diffusion into monocrystalline silicon boules.

MOCVD & Epitaxy: Susceptors engineered with exceptional thermal conductivity to ensure uniform temperature distribution across large-diameter wafers, optimizing epitaxial layer uniformity.

Ion Implantation & Etching: High-density components offering superior resistance to aggressive plasma erosion, resulting in extended operational cycles and reduced particle generation.

Raw Materials: Premium precursors inspected for a stable carbon foundation.

Purity: High-temperature purification ensuring ash content remains strictly below 5 PPM.

Physical Properties: Density, porosity, and strength tested for extreme thermal reliability.

Dimensional Accuracy: Precision CMM inspection ensuring tight tolerances (±0.005 mm to ±0.01 mm).

Surface Condition: Meticulous finishing and cleaning to eliminate defects and particulate generation.

Environmental & Regulatory Compliance: Fully compliant with RoHS and REACH standards, ensuring safe and eco-friendly semiconductor supply chain integration.

Full Traceability: Complete Material Test Reports (MTR) including third-party ICP-MS data provided for every shipment to ensure ISO 9001 compliance.